s mhop microelectronics c orp. a STM4635 symbol v ds v gs i dm a i d units parameter -40 -7 -39 vv 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max -40v -7a 50 @ vgs=-4.5v 33 @ vgs=-10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. p-channel enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted limit drain current-continuous -pulsed b a www.samhop.com.tw aug,15,2008 1 details are subject to change without notice. t a =25 c esd procteced ) a 50 w p d c 2.5 -55 to 150 c/w t a =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja a a ver 1.0 t a =70 c a -5.6 t a =70 c w 1.6 e as single pulse avalanche energy d mj 35 s o-8 1 4 3 2 1 d d d d gs s 5 6 7 8 s
4 symbol min typ max units bv dss -40 v -1 i gss 10 na v gs(th) -1.0 v g fs 9.5 s v sd c iss 935 pf c oss 192 pf c rss 105 pf q g 7 nc 16 nc q gs 99 nc q gd 18 t d(on) 17 ns t r 1.4 ns t d(off) 4.6 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1a v gs =-10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-7a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-7a v ds =-20v , i d =-7a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds = -32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3.0 v gs =-4.5v , i d =-5.7a 33 50 m ohm f=1.0mhz c v ds =-20v,i d =-7a, v gs =-20v drain-source diode characteristics and maximum ratings v gs =0v,i s =-1.7a -0.75 -1.2 v notes a.surface mounted on fr4 board, t <10sec. b.pulse test:pulse width<300us, duty cycle< 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=1.25mh,r g =25 ,v dd =20v,v gs =10v .(see figure13) _ _ STM4635 www.samhop.com.tw aug,15,2008 2 nc v ds =-20v,i d =-7a,v gs =-4.5v 8 _ c i s maximum continuous drain-source diode forward current -1.7 a 2738 ver 1.0 b -1.6
STM4635 www.samhop.com.tw aug,15,2008 3 figure 1. output characteristics -v ds , drain-to-source voltage (v) i d , drain current(a) 3024 18 12 6 0 0 0.5 1 1.5 2 2.5 3 - v g s =-4.5v v g s =-10v v g s =-2.5v v g s =-3v figure 2. transfer characteristics -v g s , g ate-to-s ource voltage (v ) -i d , drain current (a) 15 12 9 6 0 0 0.6 1.2 1.8 2.4 3.0 3.6 3 tj=125 c 25 c -i d , drain current (a) r ds(on) ( m ) 6050 40 30 20 10 0 figure 3. on-resistance vs. drain current and gate voltage 6 12 18 24 30 1 v g s =-4.5v v g s =-10v figure 4. on-resistance variation with drain current and temperature 25 125 tj( c) 100 50 75 tj, junction temperature ( c) 150 v g s =-4.5v i d =-5.7a v g s =-10v i d =-7a 0 0.8 1.81.6 1.4 1.2 1.0 vth, normalized gate-source threshold voltage tj, junction temperature ( c) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =-250ua figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature bv dss , normalized drain-source breakdown voltage tj, junction temperature ( c) -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua on-resistance r ds(on) , normalized ver 1.0 v g s =-3.5v v g s =-4v
STM4635 www.samhop.com.tw aug,15,2008 4 -v gs , gate-source voltage (v) r ds(on) ( m ) 9075 60 45 3015 0 figure 7. on-resistance vs. gate-source voltage 2 4 6 8 10 0 i d =-7a 125 c 25 c 75 c -is, source-drain current (a) figure 8. body diode forward voltage variation with source current -v sd , body diode forward voltage (v) 20.0 10.0 1.0 0 0.24 0.48 0.72 0.96 1.2 5.0 15.0 figure 9. capacitance -v ds , drain-to source voltage (v) c, capacitance (pf) 1500 1250 1000 750500 250 0 c is s c os s c rs s 0 5 10 15 20 25 30 -v gs , gate to source voltage (v) qg, total gate charge (nc) 10 86 4 2 0 0 3 6 9 12 15 18 21 24 v ds =-20v i d =-7 a figure 11.switching characteristics rg, gate resistance ( ) switching time (ns) figure 12. maximum safe operating area -v ds , drain-source voltage (v) - i d , drain current (a) figure 10. gate charge 100 10 1 0.1 0.1 1 10 40 100 ver 1.0 25 c 125 c 75 c 100 10 1 1 6 10 60 100 60 600 300 1000 vds=-20v,id=-1a vgs=-10v t d (o n) t r t d(off) t f v g s =-10v s ingle p uls e t a =25 c 10m s d c 100ms 1 ms 1s r d s ( o n) l im it 10 0 m s
STM4635 www.samhop.com.tw aug,15,2008 5 ver 1.0 t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u nc l am p ed s i n d u ct i v e t e t ci r c u i t o f r m w a v e s u nc l am p ed i n d u ct i v e 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 10 100 1000 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t ) 4. duty c ycle, d=t 1 /t 2 th th th single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1
STM4635 www.samhop.com.tw aug,15,2008 6 package outline dimensions so-8 s y mb ols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millime t e r s inc he s a a1 d eh l 1 e b h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45 ver 1.0
STM4635 www.samhop.com.tw aug,15,2008 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.40 5.20 2.10 ? 1.5 (min) ? 1.5 + 0.1 - 0.0 12.0 2 0.3 1.75 5.5 2 0.05 8.0 4.0 2.0 2 0.05 0.3 2 0.05 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 ver 1.0
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